2SK3666-3-TB-E datasheet
Mismong para sa 2SK3666-3-TB-E
Bilang bahagi : 2SK3666-3-TB-E
tagagawa : ON Semiconductor
paglalarawan : JFET N-CH 10MA 200MW 3CP
serye : -
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Boltahe - Breakdown (V (BR) GSS) : -
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Drain (Idss) @ Vds (Vgs = 0) : 1.2mA @ 10V
Kasalukuyang Drain (Id) - Max : 10mA
Boltahe - Cutoff (VGS off) @ Id : 180mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds : 4pF @ 10V
Paglaban - RDS (On) : 200 Ohms
Kapangyarihan - Max : 200mW
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device : 3-CP
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
JFET N-CH 10MA 200MW 3CP
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
4863810 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung 2SK3666-3-TB-E sa stock para ibenta.
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