Mismong para sa BSZ042N06NSATMA1

Bilang bahagi : BSZ042N06NSATMA1
tagagawa : Infineon Technologies
paglalarawan : MOSFET N-CH 60V 19A 8TSDSON
serye : OptiMOS™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 17A (Ta), 40A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2000pF @ 30V
Tampok ng FET : -
Power Dissipation (Max) : 2.1W (Ta), 69W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PG-TSDSON-8-FL
Pakete / Kaso : 8-PowerTDFN
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
MOSFET N-CH 60V 19A 8TSDSON
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
645215 piraso
reference Presyo
USD 0
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

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