BSZ12DN20NS3GATMA1 datasheet
Mismong para sa BSZ12DN20NS3GATMA1
Bilang bahagi : BSZ12DN20NS3GATMA1
tagagawa : Infineon Technologies
paglalarawan : MOSFET N-CH 200V 11.3A 8TSDSON
serye : OptiMOS™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 11.3A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 125 mOhm @ 5.7A, 10V
Vgs (th) (Max) @ Id : 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 8.7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 680pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 50W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PG-TSDSON-8
Pakete / Kaso : 8-PowerTDFN
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 200V 11.3A 8TSDSON
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
895295 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung BSZ12DN20NS3GATMA1 sa stock para ibenta.
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- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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