BUK9E1R8-40E,127 datasheet
Mismong para sa BUK9E1R8-40E,127
Bilang bahagi : BUK9E1R8-40E,127
tagagawa : NXP USA Inc.
paglalarawan : MOSFET N-CH 40V 120A I2PAK
serye : -
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 1.7 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 120nC @ 5V
Vgs (Max) : ±10V
Input Capacitance (Ciss) (Max) @ Vds : 16400pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 349W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : I2PAK
Pakete / Kaso : TO-262-3 Long Leads, I²Pak, TO-262AA
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 40V 120A I2PAK
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
24787 piraso
reference Presyo
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- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
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