CSD23202W10T datasheet
Mismong para sa CSD23202W10T
Bilang bahagi : CSD23202W10T
tagagawa : Texas Instruments
paglalarawan : MOSFET P-CH 12V 2.2A 4DSBGA
serye : NexFET™
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 2.2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 53 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id : 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 3.8nC @ 4.5V
Vgs (Max) : -6V
Input Capacitance (Ciss) (Max) @ Vds : 512pF @ 6V
Tampok ng FET : -
Power Dissipation (Max) : 1W (Ta)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 4-DSBGA (1x1)
Pakete / Kaso : 4-UFBGA, DSBGA
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
AX-CSD23202W10T
tagagawa
Maikling Paglalarawan
MOSFET P-CH 12V 2.2A 4DSBGA
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
1664550 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung CSD23202W10T sa stock para ibenta.
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