DMN3035LWN-13 datasheet
Mismong para sa DMN3035LWN-13
Bilang bahagi : DMN3035LWN-13
tagagawa : Diodes Incorporated
paglalarawan : MOSFET 2 N-CH 5.5A VDFN3020-8
serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Standard
Drain sa Source Voltage (Vdss) : -
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 5.5A (Ta)
Rds On (Max) @ Id, Vgs : 35 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 399pF @ 15V
Kapangyarihan - Max : -
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-PowerVDFN
Package ng Tagabigay ng Device : V-DFN3020-8
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET 2 N-CH 5.5A VDFN3020-8
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
2618030 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung DMN3035LWN-13 sa stock para ibenta.
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