EPC2101ENG datasheet
Mismong para sa EPC2101ENG
Bilang bahagi : EPC2101ENG
tagagawa : EPC
paglalarawan : GAN TRANS 2N-CH 60V BUMPED DIE
serye : eGaN®
Katayuan ng Bahagi : Discontinued at Digi-Key
Uri ng FET : 2 N-Channel (Half Bridge)
Tampok ng FET : GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 9.5A, 38A
Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V
Kapangyarihan - Max : -
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : Die
Package ng Tagabigay ng Device : Die
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
AX-EPC2101ENG
tagagawa
Maikling Paglalarawan
GAN TRANS 2N-CH 60V BUMPED DIE
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
29253 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung EPC2101ENG sa stock para ibenta.
- Pagpapadala pagpipilian at pagpapadala ng oras:
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- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Mga Pagpipilian sa Pagbabayad:
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