FQI7N60TU datasheet
Mismong para sa FQI7N60TU
Bilang bahagi : FQI7N60TU
tagagawa : ON Semiconductor
paglalarawan : MOSFET N-CH 600V 7.4A I2PAK
serye : QFET®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 7.4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1 Ohm @ 3.7A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1430pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 3.13W (Ta), 142W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : I2PAK (TO-262)
Pakete / Kaso : TO-262-3 Long Leads, I²Pak, TO-262AA
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
AX-FQI7N60TU
tagagawa
Maikling Paglalarawan
MOSFET N-CH 600V 7.4A I2PAK
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
339780 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung FQI7N60TU sa stock para ibenta.
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