FQN1N60CBU datasheet
Mismong para sa FQN1N60CBU
Bilang bahagi : FQN1N60CBU
tagagawa : ON Semiconductor
paglalarawan : MOSFET N-CH 600V 0.3A TO-92
serye : QFET®
Katayuan ng Bahagi : Obsolete
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 300mA (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 11.5 Ohm @ 150mA, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 170pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 1W (Ta), 3W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-92-3
Pakete / Kaso : TO-226-3, TO-92-3 (TO-226AA)
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
AX-FQN1N60CBU
tagagawa
Maikling Paglalarawan
MOSFET N-CH 600V 0.3A TO-92
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
6456 piraso
reference Presyo
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