GA10SICP12-263 datasheet
Mismong para sa GA10SICP12-263
Bilang bahagi : GA10SICP12-263
tagagawa : GeneSiC Semiconductor
paglalarawan : TRANS SJT 1200V 25A TO263-7
serye : -
Katayuan ng Bahagi : Active
Uri ng FET : -
Teknolohiya : SiC (Silicon Carbide Junction Transistor)
Drain sa Source Voltage (Vdss) : 1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 25A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 100 mOhm @ 10A
Vgs (th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1403pF @ 800V
Tampok ng FET : -
Power Dissipation (Max) : 170W (Tc)
Temperatura ng pagpapatakbo : 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : D2PAK (7-Lead)
Pakete / Kaso : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
TRANS SJT 1200V 25A TO263-7
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
23443 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung GA10SICP12-263 sa stock para ibenta.
- Pagpapadala pagpipilian at pagpapadala ng oras:
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- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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