Mismong para sa IPBH6N03LA G

Bilang bahagi : IPBH6N03LA G
tagagawa : Infineon Technologies
paglalarawan : MOSFET N-CH 25V 50A TO-263
serye : OptiMOS™
Katayuan ng Bahagi : Obsolete
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 50A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.2 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2390pF @ 15V
Tampok ng FET : -
Power Dissipation (Max) : 71W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PG-TO263-3-2
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
MOSFET N-CH 25V 50A TO-263
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
9243 piraso
reference Presyo
USD 0
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IPBH6N03LA G sa stock para ibenta.
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