IPL60R360P6SATMA1 datasheet
Mismong para sa IPL60R360P6SATMA1
Bilang bahagi : IPL60R360P6SATMA1
tagagawa : Infineon Technologies
paglalarawan : MOSFET N-CH 600V 8THINPAK
serye : CoolMOS™ P6
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 11.3A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 360 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1010pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 89.3W (Tc)
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 8-ThinPak (5x6)
Pakete / Kaso : 8-PowerTDFN
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 600V 8THINPAK
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
597905 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung IPL60R360P6SATMA1 sa stock para ibenta.
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