IRFHM830TR2PBF PDF Datasheet Download - MOSFET N-CH 30V 21A PQFN

Mismong para sa IRFHM830TR2PBF

Bilang bahagi : IRFHM830TR2PBF

tagagawa : Infineon Technologies

paglalarawan : MOSFET N-CH 30V 21A PQFN

serye : HEXFET®

Katayuan ng Bahagi : Obsolete

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 21A (Ta), 40A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2155pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 2.7W (Ta), 37W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : PQFN (3x3)

Pakete / Kaso : 8-VQFN Exposed Pad

timbang : -

kalagayan : Bago at orihinal na

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Manufacturer Bilang Bahagi

IRFHM830TR2PBF

Internal Bilang Bahagi

AX-IRFHM830TR2PBF

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET N-CH 30V 21A PQFN

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

10824 piraso

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IRFHM830TR2PBF sa stock para ibenta.

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IRFHM830TR2PBF datasheet

Mismong para sa IRFHM830TR2PBF

Kaugnay na mga produkto para sa IRFHM830TR2PBF Infineon Technologies