IRFHM8363TRPBF datasheet
Mismong para sa IRFHM8363TRPBF
Bilang bahagi : IRFHM8363TRPBF
tagagawa : Infineon Technologies
paglalarawan : MOSFET 2N-CH 30V 11A 8PQFN
serye : HEXFET®
Katayuan ng Bahagi : Not For New Designs
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 11A
Rds On (Max) @ Id, Vgs : 14.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 1165pF @ 10V
Kapangyarihan - Max : 2.7W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 8-PowerVDFN
Package ng Tagabigay ng Device : 8-PQFN (3.3x3.3), Power33
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET 2N-CH 30V 11A 8PQFN
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
1214560 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung IRFHM8363TRPBF sa stock para ibenta.
- Pagpapadala pagpipilian at pagpapadala ng oras:
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- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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