Mismong para sa IXFP56N30X3M

Bilang bahagi : IXFP56N30X3M
tagagawa : IXYS
paglalarawan : FET N-CHANNEL
serye : HiPerFET™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 300V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 56A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 27 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3750pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 36W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220 Isolated Tab
Pakete / Kaso : TO-220-3 Full Pack, Isolated Tab
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
FET N-CHANNEL
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
71060 piraso
reference Presyo
USD 0
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IXFP56N30X3M sa stock para ibenta.
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EMS: 5-8 days.
Normal Post: 10-15 days.
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