RCD100N19TL datasheet
Mismong para sa RCD100N19TL
Bilang bahagi : RCD100N19TL
tagagawa : Rohm Semiconductor
paglalarawan : MOSFET N-CH 190V 10A CPT3
serye : -
Katayuan ng Bahagi : Not For New Designs
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 190V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 10A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 182 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 52nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2000pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 850mW (Ta), 20W (Tc)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : CPT3
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
AX-RCD100N19TL
tagagawa
Maikling Paglalarawan
MOSFET N-CH 190V 10A CPT3
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
1012130 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung RCD100N19TL sa stock para ibenta.
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