RQ3E120BNTB datasheet
Mismong para sa RQ3E120BNTB
Bilang bahagi :
RQ3E120BNTB
tagagawa :
Rohm Semiconductor
paglalarawan :
MOSFET N-CH 30V 12A HSMT8
serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
9.3 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1500pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-HSMT (3.2x3)
Pakete / Kaso :
8-PowerVDFN
timbang :
-
kalagayan :
Bago at orihinal na
Garantisado ang kalidad :
365 araw na warranty
stock Resource :
Franchised Distributor / Tagagawa Direct
Bansang pinagmulan :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
AX-RQ3E120BNTB
tagagawa
Maikling Paglalarawan
MOSFET N-CH 30V 12A HSMT8
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
3110115 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung RQ3E120BNTB sa stock para ibenta.
- Pagpapadala pagpipilian at pagpapadala ng oras:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Mga Pagpipilian sa Pagbabayad:
- Paypal (Credit Card)
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