RQJ0303PGDQA#H6 datasheet
Mismong para sa RQJ0303PGDQA#H6
Bilang bahagi : RQJ0303PGDQA#H6
tagagawa : Renesas Electronics America
paglalarawan : MOSFET P-CH 30V 3.3A 3MPAK
serye : -
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 3.3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 68 mOhm @ 1.6A, 10V
Vgs (th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds : 625pF @ 10V
Tampok ng FET : -
Power Dissipation (Max) : 800mW (Ta)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 3-MPAK
Pakete / Kaso : TO-236-3, SC-59, SOT-23-3
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET P-CH 30V 3.3A 3MPAK
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
19864 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung RQJ0303PGDQA#H6 sa stock para ibenta.
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