SI1404BDH-T1-GE3 datasheet
Mismong para sa SI1404BDH-T1-GE3
Bilang bahagi : SI1404BDH-T1-GE3
tagagawa : Vishay Siliconix
paglalarawan : MOSFET N-CH 30V 1.9A SOT363
serye : TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 1.9A (Ta), 2.37A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 238 mOhm @ 1.9A, 4.5V
Vgs (th) (Max) @ Id : 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 100pF @ 15V
Tampok ng FET : -
Power Dissipation (Max) : 1.32W (Ta), 2.28W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : SC-70-6 (SOT-363)
Pakete / Kaso : 6-TSSOP, SC-88, SOT-363
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 30V 1.9A SOT363
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
1954465 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung SI1404BDH-T1-GE3 sa stock para ibenta.
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