SI5499DC-T1-GE3 datasheet
Mismong para sa SI5499DC-T1-GE3
Bilang bahagi : SI5499DC-T1-GE3
tagagawa : Vishay Siliconix
paglalarawan : MOSFET P-CH 8V 6A 1206-8
serye : TrenchFET®
Katayuan ng Bahagi : Obsolete
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 8V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 36 mOhm @ 5.1A, 4.5V
Vgs (th) (Max) @ Id : 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 8V
Vgs (Max) : ±5V
Input Capacitance (Ciss) (Max) @ Vds : 1290pF @ 4V
Tampok ng FET : -
Power Dissipation (Max) : 2.5W (Ta), 6.2W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 1206-8 ChipFET™
Pakete / Kaso : 8-SMD, Flat Lead
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET P-CH 8V 6A 1206-8
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
23144 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung SI5499DC-T1-GE3 sa stock para ibenta.
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