SIA912DJ-T1-GE3 datasheet
Mismong para sa SIA912DJ-T1-GE3
Bilang bahagi : SIA912DJ-T1-GE3
tagagawa : Vishay Siliconix
paglalarawan : MOSFET 2N-CH 12V 4.5A SC70-6
serye : TrenchFET®
Katayuan ng Bahagi : Obsolete
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4.5A
Rds On (Max) @ Id, Vgs : 40 mOhm @ 4.2A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds : 400pF @ 6V
Kapangyarihan - Max : 6.5W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : PowerPAK® SC-70-6 Dual
Package ng Tagabigay ng Device : PowerPAK® SC-70-6 Dual
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET 2N-CH 12V 4.5A SC70-6
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
27314 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung SIA912DJ-T1-GE3 sa stock para ibenta.
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