SIE816DF-T1-GE3 datasheet
Mismong para sa SIE816DF-T1-GE3
Bilang bahagi : SIE816DF-T1-GE3
tagagawa : Vishay Siliconix
paglalarawan : MOSFET N-CH 60V 60A POLARPAK
serye : TrenchFET®
Katayuan ng Bahagi : Obsolete
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 60A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7.4 mOhm @ 19.8A, 10V
Vgs (th) (Max) @ Id : 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3100pF @ 30V
Tampok ng FET : -
Power Dissipation (Max) : 5.2W (Ta), 125W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 10-PolarPAK® (L)
Pakete / Kaso : 10-PolarPAK® (L)
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 60V 60A POLARPAK
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
11888 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung SIE816DF-T1-GE3 sa stock para ibenta.
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- FEDEX: 2-3 days.
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- EMS: 5-8 days.
- Normal Post: 10-15 days.
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