SIRB40DP-T1-GE3 datasheet
Mismong para sa SIRB40DP-T1-GE3
Bilang bahagi : SIRB40DP-T1-GE3
tagagawa : Vishay Siliconix
paglalarawan : MOSFET 2 N-CH 40V POWERPAK SO8
serye : TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Standard
Drain sa Source Voltage (Vdss) : 40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 40A (Tc)
Rds On (Max) @ Id, Vgs : 3.25 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 4290pF @ 20V
Kapangyarihan - Max : 46.2W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : PowerPAK® SO-8 Dual
Package ng Tagabigay ng Device : PowerPAK® SO-8 Dual
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET 2 N-CH 40V POWERPAK SO8
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
704010 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung SIRB40DP-T1-GE3 sa stock para ibenta.
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- Normal Post: 10-15 days.
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