SISS04DN-T1-GE3 datasheet
Mismong para sa SISS04DN-T1-GE3
Bilang bahagi : SISS04DN-T1-GE3
tagagawa : Vishay Siliconix
paglalarawan : MOSFET N-CHAN 30V POWERPAK 1212-
serye : TrenchFET® Gen IV
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 50.5A (Ta), 80A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.2 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 93nC @ 10V
Vgs (Max) : +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds : 4460pF @ 15V
Tampok ng FET : -
Power Dissipation (Max) : 5W (Ta), 65.7W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PowerPAK® 1212-8S
Pakete / Kaso : PowerPAK® 1212-8S
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CHAN 30V POWERPAK 1212-
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
640005 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung SISS04DN-T1-GE3 sa stock para ibenta.
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