SSM6J511NU,LF datasheet
Mismong para sa SSM6J511NU,LF
Bilang bahagi :
SSM6J511NU,LF
tagagawa :
Toshiba Semiconductor and Storage
paglalarawan :
MOSFET P-CH 12V 14A UDFN6B
serye :
U-MOSVII
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
14A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
9.1 mOhm @ 4A, 8V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 4.5V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
3350pF @ 6V
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
6-UDFNB (2x2)
Pakete / Kaso :
6-WDFN Exposed Pad
timbang :
-
kalagayan :
Bago at orihinal na
Garantisado ang kalidad :
365 araw na warranty
stock Resource :
Franchised Distributor / Tagagawa Direct
Bansang pinagmulan :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET P-CH 12V 14A UDFN6B
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
3456070 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung SSM6J511NU,LF sa stock para ibenta.
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- DHL: 2-3 days.
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- Normal Post: 10-15 days.
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