STB11NM60N-1 PDF Datasheet Download - MOSFET N-CH 600V 10A I2PAK

Mismong para sa STB11NM60N-1

Bilang bahagi : STB11NM60N-1

tagagawa : STMicroelectronics

paglalarawan : MOSFET N-CH 600V 10A I2PAK

serye : MDmesh™ II

Katayuan ng Bahagi : Obsolete

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 600V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 10A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 450 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (Max) : ±25V

Input Capacitance (Ciss) (Max) @ Vds : 850pF @ 50V

Tampok ng FET : -

Power Dissipation (Max) : 90W (Tc)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : I2PAK

Pakete / Kaso : TO-262-3 Long Leads, I²Pak, TO-262AA

timbang : -

kalagayan : Bago at orihinal na

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Manufacturer Bilang Bahagi

STB11NM60N-1

Internal Bilang Bahagi

AX-STB11NM60N-1

tagagawa

STMicroelectronics

Maikling Paglalarawan

MOSFET N-CH 600V 10A I2PAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

64005 piraso

reference Presyo

~~USD 0~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung STB11NM60N-1 sa stock para ibenta.

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STB11NM60N-1 datasheet

Mismong para sa STB11NM60N-1

Kaugnay na mga produkto para sa STB11NM60N-1 STMicroelectronics