Mismong para sa STW18N60DM2

Bilang bahagi : STW18N60DM2
tagagawa : STMicroelectronics
paglalarawan : MOSFET N-CH 600V 12A
serye : MDmesh™ DM2
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 295 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 90W (Tc)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-247
Pakete / Kaso : TO-247-3
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
MOSFET N-CH 600V 12A
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
138755 piraso
reference Presyo
USD 0
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung STW18N60DM2 sa stock para ibenta.
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EMS: 5-8 days.
Normal Post: 10-15 days.
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