TJ10S04M3L(T6L1,NQ datasheet
Mismong para sa TJ10S04M3L(T6L1,NQ
Bilang bahagi : TJ10S04M3L(T6L1,NQ
tagagawa : Toshiba Semiconductor and Storage
paglalarawan : MOSFET P-CH 40V 10A DPAK-3
serye : U-MOSVI
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 10A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 44 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds : 930pF @ 10V
Tampok ng FET : -
Power Dissipation (Max) : 27W (Tc)
Temperatura ng pagpapatakbo : 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : DPAK+
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET P-CH 40V 10A DPAK-3
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
954295 piraso
reference Presyo
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