TK28N65W,S1F datasheet
Mismong para sa TK28N65W,S1F
Bilang bahagi : TK28N65W,S1F
tagagawa : Toshiba Semiconductor and Storage
paglalarawan : MOSFET N-CH 650V 27.6A TO247
serye : DTMOSIV
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 27.6A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 110 mOhm @ 13.8A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs : 75nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 300V
Tampok ng FET : -
Power Dissipation (Max) : 230W (Tc)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-247
Pakete / Kaso : TO-247-3
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
AX-TK28N65W,S1F
tagagawa
Maikling Paglalarawan
MOSFET N-CH 650V 27.6A TO247
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
81890 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung TK28N65W,S1F sa stock para ibenta.
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