TPC6012(TE85L,F,M) datasheet
Mismong para sa TPC6012(TE85L,F,M)
Bilang bahagi : TPC6012(TE85L,F,M)
tagagawa : Toshiba Semiconductor and Storage
paglalarawan : MOSFET N-CH 20V 6A VS6
serye : U-MOSIV
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 20 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 630pF @ 10V
Tampok ng FET : -
Power Dissipation (Max) : 700mW (Ta)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : VS-6 (2.9x2.8)
Pakete / Kaso : SOT-23-6 Thin, TSOT-23-6
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 20V 6A VS6
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
12808 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
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