TPH1110ENH,L1Q datasheet
Mismong para sa TPH1110ENH,L1Q
Bilang bahagi : TPH1110ENH,L1Q
tagagawa : Toshiba Semiconductor and Storage
paglalarawan : MOSFET N-CH 200V 7.2A 8SOP
serye : U-MOSVIII-H
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 7.2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 114 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id : 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 1.6W (Ta), 42W (Tc)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 8-SOP Advance (5x5)
Pakete / Kaso : 8-PowerVDFN
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 200V 7.2A 8SOP
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
738945 piraso
reference Presyo
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