TPH2900ENH,L1Q datasheet
Mismong para sa TPH2900ENH,L1Q
Bilang bahagi :
TPH2900ENH,L1Q
tagagawa :
Toshiba Semiconductor and Storage
paglalarawan :
MOSFET N-CH 200V 33A SOP8
serye :
U-MOSVIII-H
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
33A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
29 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2200pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
78W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SOP Advance (5x5)
Pakete / Kaso :
8-PowerVDFN
timbang :
-
kalagayan :
Bago at orihinal na
Garantisado ang kalidad :
365 araw na warranty
stock Resource :
Franchised Distributor / Tagagawa Direct
Bansang pinagmulan :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 200V 33A SOP8
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
440630 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung TPH2900ENH,L1Q sa stock para ibenta.
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