TSM60NB190CM2 RNG datasheet
Mismong para sa TSM60NB190CM2 RNG
Bilang bahagi : TSM60NB190CM2 RNG
tagagawa : Taiwan Semiconductor Corporation
paglalarawan : MOSFET N-CH 600V 18A TO263
serye : -
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 18A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1273pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 150.6W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : TO-263 (D²Pak)
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET N-CH 600V 18A TO263
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
313805 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
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