IMBD4448-HE3-18 - DIODE GEN PURP 75V 150MA SOT23

Manufacturer Bilang Bahagi
Internal Bilang Bahagi
Maikling Paglalarawan
DIODE GEN PURP 75V 150MA SOT23
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
11907485 Pieces
reference Presyo
USD 0.023562
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IMBD4448-HE3-18 sa stock para ibenta.
Pagpapadala pagpipilian at pagpapadala ng oras:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Mga Pagpipilian sa Pagbabayad:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Mismong para sa IMBD4448-HE3-18

Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Bilang bahagi : IMBD4448-HE3-18
tagagawa : Vishay Semiconductor Diodes Division
paglalarawan : DIODE GEN PURP 75V 150MA SOT23
serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 75V
Kasalukuyang - Average na Rectified (Io) : 150mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 10mA
Bilis : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Kasalukuyang - Reverse Leakage @ Vr : 2.5µA @ 70V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device : SOT-23
Operating temperatura - Junction : 150°C (Max)
timbang : -
kalagayan : Bago at orihinal na
Mga Kaugnay na Link : IMBD4 , IMBD444

Mga dokumento para sa IMBD4448-HE3-18

datasheets : IMBD4448-HE3-18.pdf

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