SISF00DN-T1-GE3 datasheet
Mismong para sa SISF00DN-T1-GE3
Bilang bahagi : SISF00DN-T1-GE3
tagagawa : Vishay Siliconix
paglalarawan : MOSFET DUAL N-CH 30V POWERPAK 12
serye : TrenchFET® Gen IV
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual) Common Drain
Tampok ng FET : Standard
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 60A (Tc)
Rds On (Max) @ Id, Vgs : 5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 2700pF @ 15V
Kapangyarihan - Max : 69.4W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : PowerPAK® 1212-8SCD
Package ng Tagabigay ng Device : PowerPAK® 1212-8SCD
timbang : -
kalagayan : Bago at orihinal na
Garantisado ang kalidad : 365 araw na warranty
stock Resource : Franchised Distributor / Tagagawa Direct
Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Bilang Bahagi
Internal Bilang Bahagi
tagagawa
Maikling Paglalarawan
MOSFET DUAL N-CH 30V POWERPAK 12
RoHS Status
Lead libreng / RoHS compliant
Oras ng paghatid
1-2 araw
magagamit na Dami
670410 piraso
reference Presyo
Ang aming Presyo
- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])
- AXE Semiconductor kung SISF00DN-T1-GE3 sa stock para ibenta.
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