SISF00DN-T1-GE3 - MOSFET DUAL N-CH 30V POWERPAK 12

Manufacturer Bilang Bahagi

SISF00DN-T1-GE3

Internal Bilang Bahagi

AX-SISF00DN-T1-GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET DUAL N-CH 30V POWERPAK 12

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

670410 Pieces

reference Presyo

~~USD 0.418494~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SISF00DN-T1-GE3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SISF00DN-T1-GE3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SISF00DN-T1-GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET DUAL N-CH 30V POWERPAK 12

serye : TrenchFET® Gen IV

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual) Common Drain

Tampok ng FET : Standard

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 60A (Tc)

Rds On (Max) @ Id, Vgs : 5 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 53nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 2700pF @ 15V

Kapangyarihan - Max : 69.4W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : PowerPAK® 1212-8SCD

Package ng Tagabigay ng Device : PowerPAK® 1212-8SCD

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SISF0 , SISF00D

Mga dokumento para sa SISF00DN-T1-GE3

datasheets : SISF00DN-T1-GE3.pdf

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