BSO615CGHUMA1 - MOSFET N/P-CH 60V 3.1A/2A 8SOIC

Manufacturer Bilang Bahagi

BSO615CGHUMA1

Internal Bilang Bahagi

AX-BSO615CGHUMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET N/P-CH 60V 3.1A/2A 8SOIC

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1022690 Pieces

reference Presyo

~~USD 0.274338~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung BSO615CGHUMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BSO615CGHUMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BSO615CGHUMA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET N/P-CH 60V 3.1A/2A 8SOIC

serye : SIPMOS®

Katayuan ng Bahagi : Active

Uri ng FET : N and P-Channel

Tampok ng FET : Logic Level Gate

Drain sa Source Voltage (Vdss) : 60V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 3.1A, 2A

Rds On (Max) @ Id, Vgs : 110 mOhm @ 3.1A, 10V

Vgs (th) (Max) @ Id : 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs : 22.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 25V

Kapangyarihan - Max : 2W

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)

Package ng Tagabigay ng Device : PG-DSO-8

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BSO6 , BSO615

Mga dokumento para sa BSO615CGHUMA1

datasheets : BSO615CGHUMA1.pdf

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