SI7900AEDN-T1-GE3 - MOSFET 2N-CH 20V 6A PPAK 1212-8

Manufacturer Bilang Bahagi

SI7900AEDN-T1-GE3

Internal Bilang Bahagi

AX-SI7900AEDN-T1-GE3

tagagawa

Vishay Siliconix

Maikling Paglalarawan

MOSFET 2N-CH 20V 6A PPAK 1212-8

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

838600 Pieces

reference Presyo

~~USD 0.33456~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung SI7900AEDN-T1-GE3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa SI7900AEDN-T1-GE3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : SI7900AEDN-T1-GE3

tagagawa : Vishay Siliconix

paglalarawan : MOSFET 2N-CH 20V 6A PPAK 1212-8

serye : TrenchFET®

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Dual) Common Drain

Tampok ng FET : Logic Level Gate

Drain sa Source Voltage (Vdss) : 20V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 6A

Rds On (Max) @ Id, Vgs : 26 mOhm @ 8.5A, 4.5V

Vgs (th) (Max) @ Id : 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds : -

Kapangyarihan - Max : 1.5W

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : PowerPAK® 1212-8 Dual

Package ng Tagabigay ng Device : PowerPAK® 1212-8 Dual

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : SI790 , SI7900AE

Mga dokumento para sa SI7900AEDN-T1-GE3

datasheets : SI7900AEDN-T1-GE3.pdf

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