DMJ70H900HJ3 - MOSFET BVDSS 651V 800V TO251

Manufacturer Bilang Bahagi

DMJ70H900HJ3

Internal Bilang Bahagi

AX-DMJ70H900HJ3

tagagawa

Diodes Incorporated

Maikling Paglalarawan

MOSFET BVDSS 651V 800V TO251

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

323020 Pieces

reference Presyo

~~USD 0.86856~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DMJ70H900HJ3 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DMJ70H900HJ3

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DMJ70H900HJ3

tagagawa : Diodes Incorporated

paglalarawan : MOSFET BVDSS 651V 800V TO251

serye : Automotive, AEC-Q101

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 700V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 7A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 900 mOhm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 18.4nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 603pF @ 50V

Tampok ng FET : -

Power Dissipation (Max) : 68W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Through Hole

Package ng Tagabigay ng Device : TO-251

Pakete / Kaso : TO-251-3, IPak, Short Leads

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DMJ7 , DMJ70H

Mga dokumento para sa DMJ70H900HJ3

datasheets : DMJ70H900HJ3.pdf

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