2SJ661-DL-1E - MOSFET P-CH 60V 38A

Manufacturer Bilang Bahagi

2SJ661-DL-1E

Internal Bilang Bahagi

AX-2SJ661-DL-1E

tagagawa

ON Semiconductor

Maikling Paglalarawan

MOSFET P-CH 60V 38A

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

352940 Pieces

reference Presyo

~~USD 0.794928~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung 2SJ661-DL-1E sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa 2SJ661-DL-1E

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : 2SJ661-DL-1E

tagagawa : ON Semiconductor

paglalarawan : MOSFET P-CH 60V 38A

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 60V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 38A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4V, 10V

Rds On (Max) @ Id, Vgs : 39 mOhm @ 19A, 10V

Vgs (th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 4360pF @ 20V

Tampok ng FET : -

Power Dissipation (Max) : 1.65W (Ta), 65W (Tc)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : TO-263-2

Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : 2SJ6 , 2SJ661

Mga dokumento para sa 2SJ661-DL-1E

datasheets : 2SJ661-DL-1E.pdf

Kaugnay na mga produkto para sa 2SJ661-DL-1E ON Semiconductor

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