BSH108,215 - MOSFET N-CH 30V 1.9A SOT23

Manufacturer Bilang Bahagi

BSH108,215

Internal Bilang Bahagi

AX-BSH108,215

tagagawa

Nexperia USA Inc.

Maikling Paglalarawan

MOSFET N-CH 30V 1.9A SOT23

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1886345 Pieces

reference Presyo

~~USD 0.148734~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung BSH108,215 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BSH108,215

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BSH108,215

tagagawa : Nexperia USA Inc.

paglalarawan : MOSFET N-CH 30V 1.9A SOT23

serye : TrenchMOS™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 1.9A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 120 mOhm @ 1A, 10V

Vgs (th) (Max) @ Id : 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 190pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 830mW (Tc)

Temperatura ng pagpapatakbo : -65°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : TO-236AB

Pakete / Kaso : TO-236-3, SC-59, SOT-23-3

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BSH , BSH10

Mga dokumento para sa BSH108,215

datasheets : BSH108,215.pdf

Kaugnay na mga produkto para sa BSH108,215 Nexperia USA Inc.

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