DF11MR12W1M1B11BOMA1 - MOSFET MODULE 1200V 50A

Manufacturer Bilang Bahagi

DF11MR12W1M1B11BOMA1

Internal Bilang Bahagi

AX-DF11MR12W1M1B11BOMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET MODULE 1200V 50A

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

5560 Pieces

reference Presyo

~~USD 80.616~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung DF11MR12W1M1B11BOMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa DF11MR12W1M1B11BOMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : DF11MR12W1M1B11BOMA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET MODULE 1200V 50A

serye : CoolSiC™

Katayuan ng Bahagi : Obsolete

Uri ng FET : 2 N-Channel (Dual)

Tampok ng FET : Silicon Carbide (SiC)

Drain sa Source Voltage (Vdss) : 1200V (1.2kV)

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 50A

Rds On (Max) @ Id, Vgs : 23 mOhm @ 50A, 15V

Vgs (th) (Max) @ Id : 5.5V @ 20mA

Gate Charge (Qg) (Max) @ Vgs : 125nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds : 3950pF @ 800V

Kapangyarihan - Max : 20mW

Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)

Uri ng Pag-mount : Chassis Mount

Pakete / Kaso : Module

Package ng Tagabigay ng Device : Module

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : DF11MR , DF11MR12W1

Mga dokumento para sa DF11MR12W1M1B11BOMA1

datasheets : DF11MR12W1M1B11BOMA1.pdf

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