1N6479HE3/96 - DIODE GEN PURP 100V 1A DO213AB

Manufacturer Bilang Bahagi

1N6479HE3/96

Internal Bilang Bahagi

AX-1N6479HE3/96

tagagawa

Vishay Semiconductor Diodes Division

Maikling Paglalarawan

DIODE GEN PURP 100V 1A DO213AB

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

3325320 Pieces

reference Presyo

~~USD 0.084372~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung 1N6479HE3/96 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa 1N6479HE3/96

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : 1N6479HE3/96

tagagawa : Vishay Semiconductor Diodes Division

paglalarawan : DIODE GEN PURP 100V 1A DO213AB

serye : SUPERECTIFIER®

Katayuan ng Bahagi : Active

Uri ng Diode : Standard

Boltahe - DC Reverse (Vr) (Max) : 100V

Kasalukuyang - Average na Rectified (Io) : 1A

Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 1A

Bilis : Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr) : -

Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 100V

Capacitance @ Vr, F : 8pF @ 4V, 1MHz

Uri ng Pag-mount : Surface Mount

Pakete / Kaso : DO-213AB, MELF (Glass)

Package ng Tagabigay ng Device : DO-213AB

Operating temperatura - Junction : -65°C ~ 175°C

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : 1N64 , 1N6479

Mga dokumento para sa 1N6479HE3/96

datasheets : 1N6479HE3/96.pdf

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