IPD60N10S4L12ATMA1 - MOSFET N-CH TO252-3

Manufacturer Bilang Bahagi

IPD60N10S4L12ATMA1

Internal Bilang Bahagi

AX-IPD60N10S4L12ATMA1

tagagawa

Infineon Technologies

Maikling Paglalarawan

MOSFET N-CH TO252-3

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

868780 Pieces

reference Presyo

~~USD 0.322938~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung IPD60N10S4L12ATMA1 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa IPD60N10S4L12ATMA1

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : IPD60N10S4L12ATMA1

tagagawa : Infineon Technologies

paglalarawan : MOSFET N-CH TO252-3

serye : Automotive, AEC-Q101, HEXFET®

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 60A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 12 mOhm @ 60A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 46µA

Gate Charge (Qg) (Max) @ Vgs : 49nC @ 10V

Vgs (Max) : ±16V

Input Capacitance (Ciss) (Max) @ Vds : 3170pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 94W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : PG-TO252-3-313

Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : IPD60N , IPD60N10S

Mga dokumento para sa IPD60N10S4L12ATMA1

datasheets : IPD60N10S4L12ATMA1.pdf

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