PHB191NQ06LT,118 - MOSFET N-CH 55V 75A D2PAK

Manufacturer Bilang Bahagi

PHB191NQ06LT,118

Internal Bilang Bahagi

AX-PHB191NQ06LT,118

tagagawa

Nexperia USA Inc.

Maikling Paglalarawan

MOSFET N-CH 55V 75A D2PAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

429855 Pieces

reference Presyo

~~USD 0.652686~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung PHB191NQ06LT,118 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa PHB191NQ06LT,118

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : PHB191NQ06LT,118

tagagawa : Nexperia USA Inc.

paglalarawan : MOSFET N-CH 55V 75A D2PAK

serye : TrenchMOS™

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 55V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 75A (Tc)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 95.6nC @ 5V

Vgs (Max) : ±15V

Input Capacitance (Ciss) (Max) @ Vds : 7665pF @ 25V

Tampok ng FET : -

Power Dissipation (Max) : 300W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : D2PAK

Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : PHB19 , PHB191NQ

Mga dokumento para sa PHB191NQ06LT,118

datasheets : PHB191NQ06LT,118.pdf

Kaugnay na mga produkto para sa PHB191NQ06LT,118 Nexperia USA Inc.

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