TPC6110(TE85L,F,M) - MOSFET P-CH 30V 4.5A VS6

Manufacturer Bilang Bahagi

TPC6110(TE85L,F,M)

Internal Bilang Bahagi

AX-TPC6110(TE85L,F,M)

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

MOSFET P-CH 30V 4.5A VS6

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1978450 Pieces

reference Presyo

~~USD 0.14181~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung TPC6110(TE85L,F,M) sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TPC6110(TE85L,F,M)

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TPC6110(TE85L,F,M)

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : MOSFET P-CH 30V 4.5A VS6

serye : U-MOSVI

Katayuan ng Bahagi : Active

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4.5A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : 56 mOhm @ 2.2A, 10V

Vgs (th) (Max) @ Id : 2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V

Vgs (Max) : -

Input Capacitance (Ciss) (Max) @ Vds : 510pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 700mW (Ta)

Temperatura ng pagpapatakbo : 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : VS-6 (2.9x2.8)

Pakete / Kaso : SOT-23-6 Thin, TSOT-23-6

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TPC611 , TPC6110(T

Mga dokumento para sa TPC6110(TE85L,F,M)

datasheets : TPC6110(TE85L,F,M).pdf

Kaugnay na mga produkto para sa TPC6110(TE85L,F,M) Toshiba Semiconductor and Storage

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