TJ8S06M3L(T6L1,NQ) - MOSFET P-CH 60V 8A DPAK-3

Manufacturer Bilang Bahagi

TJ8S06M3L(T6L1,NQ)

Internal Bilang Bahagi

AX-TJ8S06M3L(T6L1,NQ)

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

MOSFET P-CH 60V 8A DPAK-3

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

1012130 Pieces

reference Presyo

~~USD 0.2772~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung TJ8S06M3L(T6L1,NQ) sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TJ8S06M3L(T6L1,NQ)

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TJ8S06M3L(T6L1,NQ)

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : MOSFET P-CH 60V 8A DPAK-3

serye : U-MOSVI

Katayuan ng Bahagi : Active

Uri ng FET : P-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 60V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 8A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 104 mOhm @ 4A, 10V

Vgs (th) (Max) @ Id : 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 19nC @ 10V

Vgs (Max) : +10V, -20V

Input Capacitance (Ciss) (Max) @ Vds : 890pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 27W (Tc)

Temperatura ng pagpapatakbo : 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : DPAK+

Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TJ8S06 , TJ8S06M3L

Mga dokumento para sa TJ8S06M3L(T6L1,NQ)

datasheets : TJ8S06M3L(T6L1,NQ).pdf

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