PMZB200UNEYL - MOSFET N-CH 30V SOT883

Manufacturer Bilang Bahagi

PMZB200UNEYL

Internal Bilang Bahagi

AX-PMZB200UNEYL

tagagawa

Nexperia USA Inc.

Maikling Paglalarawan

MOSFET N-CH 30V SOT883

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

6417880 Pieces

reference Presyo

~~USD 0.043716~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung PMZB200UNEYL sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa PMZB200UNEYL

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : PMZB200UNEYL

tagagawa : Nexperia USA Inc.

paglalarawan : MOSFET N-CH 30V SOT883

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 30V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 1.4A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 250 mOhm @ 1.4A, 4.5V

Vgs (th) (Max) @ Id : 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 4.5V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 89pF @ 15V

Tampok ng FET : -

Power Dissipation (Max) : 350mW (Ta), 6.25W (Tc)

Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : DFN1006B-3

Pakete / Kaso : 3-XFDFN

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : PMZB , PMZB20

Mga dokumento para sa PMZB200UNEYL

datasheets : PMZB200UNEYL.pdf

Kaugnay na mga produkto para sa PMZB200UNEYL Nexperia USA Inc.

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