TK55S10N1,LQ - MOSFET N-CH 100V 55A DPAK

Manufacturer Bilang Bahagi

TK55S10N1,LQ

Internal Bilang Bahagi

AX-TK55S10N1,LQ

tagagawa

Toshiba Semiconductor and Storage

Maikling Paglalarawan

MOSFET N-CH 100V 55A DPAK

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

383470 Pieces

reference Presyo

~~USD 0.73164~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung TK55S10N1,LQ sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa TK55S10N1,LQ

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : TK55S10N1,LQ

tagagawa : Toshiba Semiconductor and Storage

paglalarawan : MOSFET N-CH 100V 55A DPAK

serye : U-MOSVIII-H

Katayuan ng Bahagi : Active

Uri ng FET : N-Channel

Teknolohiya : MOSFET (Metal Oxide)

Drain sa Source Voltage (Vdss) : 100V

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 55A (Ta)

Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 27.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs : 49nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3280pF @ 10V

Tampok ng FET : -

Power Dissipation (Max) : 157W (Tc)

Temperatura ng pagpapatakbo : 175°C (TJ)

Uri ng Pag-mount : Surface Mount

Package ng Tagabigay ng Device : DPAK+

Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : TK55 , TK55S1

Mga dokumento para sa TK55S10N1,LQ

datasheets : TK55S10N1,LQ.pdf

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