BSM120D12P2C005 - MOSFET 2N-CH 1200V 120A MODULE

Manufacturer Bilang Bahagi

BSM120D12P2C005

Internal Bilang Bahagi

AX-BSM120D12P2C005

tagagawa

Rohm Semiconductor

Maikling Paglalarawan

MOSFET 2N-CH 1200V 120A MODULE

RoHS Status

Lead libreng / RoHS compliant

Oras ng paghatid

1-2 araw

magagamit na Dami

9169 Pieces

reference Presyo

~~USD 223.974~~

Ang aming Presyo

- (Mangyaring makipag-ugnay sa amin para sa isang mas mahusay na presyo: [email protected])

AXE Semiconductor kung BSM120D12P2C005 sa stock para ibenta.

Pagpapadala pagpipilian at pagpapadala ng oras:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Mga Pagpipilian sa Pagbabayad:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Mismong para sa BSM120D12P2C005

Garantisado ang kalidad : 365 araw na warranty

stock Resource : Franchised Distributor / Tagagawa Direct

Bansang pinagmulan : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Bilang bahagi : BSM120D12P2C005

tagagawa : Rohm Semiconductor

paglalarawan : MOSFET 2N-CH 1200V 120A MODULE

serye : -

Katayuan ng Bahagi : Active

Uri ng FET : 2 N-Channel (Half Bridge)

Tampok ng FET : Silicon Carbide (SiC)

Drain sa Source Voltage (Vdss) : 1200V (1.2kV)

Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120A (Tc)

Rds On (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 2.7V @ 22mA

Gate Charge (Qg) (Max) @ Vgs : -

Input Capacitance (Ciss) (Max) @ Vds : 14000pF @ 10V

Kapangyarihan - Max : 780W

Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)

Uri ng Pag-mount : -

Pakete / Kaso : Module

Package ng Tagabigay ng Device : Module

timbang : -

kalagayan : Bago at orihinal na

Mga Kaugnay na Link : BSM12 , BSM120D

Mga dokumento para sa BSM120D12P2C005

datasheets : BSM120D12P2C005.pdf

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